Over the past few hours, Samsung has revealed its first module DDR5 memory da 512 GB based on the new process High-K Metal Gate, also known as HKMG. DDR5, the new commercial DRAM standard, addresses the needs of compute-hungry, high-bandwidth workloads in supercomputing, artificial intelligence and machine learning applications. As you have already noticed, this is a particularly rich period of news for the hardware components market, which will soon see the entry of NVIDIA GeForce RTX 3080 Ti e 3070 Ti.
As a successor to the popular DDR4, this new look into the future promises to double the performance up to 7.200 megabits per second, enough speed to process two 30GB ultra-high definition movies in one second, with the new HKMG solution that helps reduce current leakage. The memory in question can send and receive data signals twice during a single clock cycle and allows for significantly higher transfer rates and capacities.
HKMG technology is traditionally used in semiconductors logical, where it uses a high dielectric material in the insulating layer to reduce current leakage. In DRAM structures this insulating layer is thinned, which often results in a higher leakage current. But with its new DDR5, Samsung has now replaced insulation with HKMG material to not only reduce losses but also use less energy, making it ideal for data centers where energy efficiency is becoming increasingly critical.
The HKMG process was first adopted in the industry in the GDDR6 memory Samsung released in 2018 before being now extended to DDR5 memory. Samsung said it has now applied the technology through-silicon to stack eight layers of DRAM chips from 16 gigabit for the industry's maximum capacity of 512 GB. In addition to this module, the company would be sampling different variants of its family to customers, with the help of partners such as Intel. Here are the words of Carolyn Duran, vice president and general manager of memory and IO technology at Intel:
Intel's engineering teams work closely with memory leaders such as Samsung to deliver fast and energy efficient DDR5 memory, optimized for performance and compatible with our future Intel Xeon Scalable processors, codenamed Sapphire Rapids
